charger


2021-06-11

Third-Generation Semiconductor GaN Technology Expected to Revolutionize the Fast Charging Industry

In response to the increasing demands of mobile applications, manufacturers are now placing a priority on extending the battery life of such devices like smartphones and notebook computers. However, due to the inherent limitations of physical space in these devices, the quest for ever-greater battery capacity has seemingly reached a bottleneck, forcing them to look elsewhere for solutions, hence the development of fast charging technology. As such, fast chargers equipped with GaN (Gallium nitride, which is a third-generation semiconductor) chips have are now expected to introduce the next chapter for the fast charging market.

According to TrendForce’s latest investigations, as smartphone brands including Xiaomi, OPPO, and Vivo have successively been releasing fast chargers since 2018, the market demand for GaN power devices has undergone a corresponding growth as well. Given the continued upward trajectory of the market, GaN power device revenue for 2021 is expected to reach US$61 million, a 90.6% YoY increase.


Due to their low portability and tendency to overheat, traditional fast chargers are increasingly unable to meet consumer demand

In the past, fast chargers were generally based on Si (Silicon) chips. However, as these chargers increase in wattage, their mass and physical dimension increased as well, meaning they suffered from low portability and a tendency to overheat when fast charging. On the other hand, as battery capacities expanded past the 4000mAh mark, traditional Si chargers began to see a drop in charging efficiency. In light of this, after certain breakthroughs in GaN manufacturing technologies were achieved, next-gen GaN chargers are likely to completely transform most consumers’ preexisting impressions of fast chargers.

Nonetheless, the manufacturing costs of GaN chargers are still 80%-120% higher compared with Si chargers at the moment. That is why very few devices bundle GaN chargers as a standard accessory included with the purchase and why GaN chargers are consequently sold separately instead. TrendForce expects the market for GaN chargers to experience rapid growth in 2021, with about 57 million units shipped for the year.

IC design company Navitas is the biggest winner in the GaN charger supply chain

The GaN charger supply chain encompasses virtually all major companies in various industries, and companies for which GaN businesses account for a larger share of their sales or technologies are more likely to benefit from the booming GaN charging market as well. As the largest supplier of GaN charger chips at the moment, Navitas has a clientele consisting of such major brands as Xiaomi, OPPO, Lenovo, Asus-Adol, and Dell. TrendForce’s investigations find that Navitas’ share in the GaN charger chip market surpassed 50% as of last year.

Navitas’ chips are currently fabricated with TSMC’s GaN on Si technology on 6-inch wafers, while TSMC is planning to increase its GaN production capacities by outsourcing its epitaxial processes to Ennostar subsidiary Unikorn. As Navitas expands its shipment volume going forward, TSMC and Ennostar are expected to benefit as well.

(Cover image source: Unsplash)

2021-03-11

Strong Growth Expected for Third-Generation Semiconductors in 2021, with GaN Power Devices Undergoing Highest YoY Increase in Revenue at 90.6%, Says TrendForce

The third-generation semiconductor industry was impaired by the US-China trade war and the COVID-19 pandemic successively from 2018 to 2020, according to TrendForce’s latest investigations. During this period, the semiconductor industry on the whole saw limited upward momentum, in turn leading to muted growth for the 3rd gen semiconductor segment as well. However, this segment is likely to enter a rapid upturn owing to high demand from automotive, industrial, and telecom applications. In particular, the GaN power device market will undergo the fastest growth, with a $61 million revenue, a 90.6% YoY increase, projected for 2021.

TrendForce expects three factors to drive the rapid growth of the GaN and SiC markets in 2021: First, widespread vaccinations are projected to drastically curb the spread of the pandemic, thereby galvanizing a stable increase in the demand for base station components, as well as for components used in industrial energy transition, such as power inverters and converters. Secondly, as Tesla began adopting SiC MOSFET designs for its in-house inverters used in Model 3 vehicles, the automotive industry has started to place increasing importance on 3rd gen semiconductors. Finally, China will invest enormous capital into its 14th five-year plan starting this year and expand its 3rd gen semiconductor production capacity to ultimately achieve semiconductor independence.

Resurging demand from EV, industrial, and telecom sectors will bring about a corresponding increase in 3rd gen semiconductor device revenue

Although certain foundries, such as TSMC and VIS, have been attempting to manufacture GaN devices with 8-inch wafers, 6-inch wafers are still the mainstream. As the pandemic shows signs of a slowdown, the demand for RF front end in 5G base stations, for smartphone chargers, and for automotive on-board chargers has now gradually risen. As such, total yearly revenue from GaN RF devices is projected to reach US$680 million, a 30.8% increase YoY, in 2021, whereas GaN power device revenue is projected to reach $61 million, which is a 90.6% increase YoY.

In particular, the remarkable increase in GaN power device revenue can primarily be attributed to the release of fast chargers from smartphone brands, such as Xiaomi, OPPO, and Vivo, starting in 2018. These chargers enjoyed excellent market reception thanks to their effective heat dissipation and small footprint. Some notebook computer manufacturers are currently looking to adopt fast charging technology for their notebook chargers as well. Going forward, TrendForce expects more smartphone and notebook chargers to feature GaN power devices, leading to a peak YoY increase in GaN power device revenue in 2022, after which there will be a noticeable slowdown in its upward trajectory as GaN power devices become widely adopted by charger manufacturers.

On the other hand, 6-inch wafer capacities for SiC devices have been in relative shortage, since SiC substrates are widely used in RF front end and power devices. TrendForce expects yearly SiC power device revenue to reach $680 million, a 32% increase YoY, in 2021. Major substrate suppliers, including Cree, II-VI, and STMicroelectronics, are planning to manufacture 8-inch SiC substrates, but the short supply of SiC substrates will unlikely be resolved until 2022.

For more information on reports and market data from TrendForce’s Department of Semiconductor Research, please click here, or email Ms. Latte Chung from the Sales Department at lattechung@trendforce.com

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